- 专利标题: Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masks
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申请号: US11247937申请日: 2005-10-11
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公开(公告)号: US20060079076A1公开(公告)日: 2006-04-13
- 发明人: Dong-Chan Kim , Chang-Jin Kang , Kyeong-Koo Chi , Sung-Hoon Chung
- 申请人: Dong-Chan Kim , Chang-Jin Kang , Kyeong-Koo Chi , Sung-Hoon Chung
- 优先权: KR2004-81501 20041012
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/336 ; H01L21/8234
摘要:
Methods of forming field effect transistors include forming a first electrically insulating layer comprising mostly carbon on a surface of a semiconductor substrate and patterning the first electrically insulating layer to define an opening therein. A trench is formed in the substrate by etching the surface of the substrate using the patterned first electrically insulating layer as an etching mask. The trench is filled with a gate electrode. The first electrically insulating layer is patterned in an ambient containing oxygen. This oxygen-containing ambient supports further oxidation of trench-based isolation regions within the substrate when they are exposed by openings within the first electrically insulating layer.