发明申请
US20060081950A1 Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
审中-公开
用于电化学分子存储器件的Molehole嵌入式3-D交叉结构架构
- 专利标题： Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
- 专利标题（中）： 用于电化学分子存储器件的Molehole嵌入式3-D交叉结构架构
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申请号： US11112359申请日： 2005-04-22
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公开(公告)号： US20060081950A1公开(公告)日： 2006-04-20
- 发明人: Werner Kuhr , David Bocian , Zhiming Liu , Amir Yasseri
- 申请人： Werner Kuhr , David Bocian , Zhiming Liu , Amir Yasseri
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L27/14 ; H01L29/84
摘要：
This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated by a non-conductor (e.g., a dialectric layer and solid electrolyte). When used in electrochemical molecular memory device (EMMD), the architecture provides unique features such as a nano-scale electroactive surface, no interaction between memory elements, and easier miniaturization and integration.
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