发明申请
US20060084225A1 Apparatus for forming dielectric structures in integrated circuits
审中-公开
用于在集成电路中形成电介质结构的装置
- 专利标题： Apparatus for forming dielectric structures in integrated circuits
- 专利标题（中）： 用于在集成电路中形成电介质结构的装置
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申请号： US11291191申请日： 2005-12-01
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公开(公告)号： US20060084225A1公开(公告)日： 2006-04-20
- 发明人: In-Sung Park , Ki-Vin Im , Ki-Yeon Park , Jae-Hyun Yeo , Yun-Jung Lee
- 申请人： In-Sung Park , Ki-Vin Im , Ki-Yeon Park , Jae-Hyun Yeo , Yun-Jung Lee
- 优先权： KR2003-6513 20030203
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
In some embodiments, a multi-layer dielectric structure, such as a capacitor dielectric region, is formed by forming a first dielectric layer on a substrate according to a CVD process and forming a second dielectric layer directly on the first dielectric layer according to an ALD process. In further embodiments, a multi-layer dielectric structure is formed by forming a first dielectric layer on a substrate according to an ALD process and forming a second dielectric layer directly on the first dielectric layer according to a CVD process. The CVD-formed layers may comprise one selected from the group consisting of SiO2, Si3N3, Ta2O5, HfO2, ZrO2, TiO2, Y2O3, Pr2O3, La2O3, Nb2O5, SrTiO3 (STO), BaSrTiO3 (BST) and PbZrTiO3 (PZT). The ALD-formed layers may comprise one selected from the group consisting of SiO2, Si3N3, Al2O3, Ta2O5, HfO2, ZrO2, TiO2, Y2O3, Pr2O3, La2O3, Nb2O5, SrTiO3 (STO), BaSrTiO3 (BST) and PbZrTiO3 (PZT).