Invention Application
- Patent Title: Polishing slurries for copper and associated materials
- Patent Title (中): 抛光用于铜和相关材料的浆料
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Application No.: US11145807Application Date: 2005-06-06
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Publication No.: US20060084272A1Publication Date: 2006-04-20
- Inventor: William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
- Applicant: William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
Public/Granted literature
- US07427567B2 Polishing slurries for copper and associated materials Public/Granted day:2008-09-23
Information query
IPC分类:
