A method of dry etching a dielectric layer is provided that prevents or significantly reduces deep ultraviolet photoresist damage and bird's beak problems. The dry etch method provided comprises the steps of providing a substrate having a dielectric layer overlying at least a portion of the substrate's surface; applying a deep ultraviolet (DUV) photoresist mask having a pattern of exposed area on at least a portion of the dielectric layer; and etching the masked dielectric layer with a plasma formed from a mixture of gases comprising a gaseous fluorine species, hydrogen, and helium.