发明申请
US20060086978A1 Thin film transistor, electro-optical device and electronic apparatus
审中-公开
薄膜晶体管，电光器件和电子设备
- 专利标题： Thin film transistor, electro-optical device and electronic apparatus
- 专利标题（中）： 薄膜晶体管，电光器件和电子设备
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申请号： US11226364申请日： 2005-09-15
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公开(公告)号： US20060086978A1公开(公告)日： 2006-04-27
- 发明人: Yosuke Kobayashi
- 申请人： Yosuke Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-306607 20041021; JP2004-306608 20041021; JP2005-187724 20050628
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/01
摘要：
A thin film transistor includes a semiconductor layer formed over a substrate, and an electrode member formed over the substrate by a liquid phase method. The electrode member includes a base layer composed of a metal material and an outer surface layer deposited on at least one surface of the base layer. The outer surface layer is formed of a metal material that is less susceptible to being dissolved in silicon and a silicon compound compared with the metal material constituting the base layer.
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