A computer-implemented method and a carrier medium adapted to improve lithographic processes are provided. In some embodiments, the computer-implemented method and carrier medium may be used for identifying potential causes of lithography process failure or drift. In addition or alternatively, the computer-implemented method and carrier medium may be adapted to generate a set of process parameter values for a lithography process based upon both critical dimension and overlay effect analyses of process parameter value variations. In some cases, the set of process parameter values may be selected to collectively minimize the number critical dimension and overlay variation errors produced within an image fabricated from the lithography process.