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发明申请
US20060091107A1 Selective etching processes of SiO2, Ti and In2O3 thin films for FeRAM device applications 失效
用于FeRAM器件应用的SiO2，Ti和In2O3薄膜的选择性蚀刻工艺

Selective etching processes of SiO2, Ti and In2O3 thin films for FeRAM device applications
摘要：
A method of selectively etching a three-layer structure consisting of SiO2, In2O3, and titanium, includes etching the SiO2, stopping at the titanium layer, using C3F8 in a range of between about 10 sccm to 30 sccm; argon in a range of between about 20 sccm to 40 sccm, using an RF source in a range of between about 1000 watts to 3000 watts and an RF bias in a range of between about 400 watts to 800 watts at a pressure in a range of between about 2 mtorr to 6 mtorr; and etching the titanium, stopping at the In2O3 layer, using BCl in a range of between about 10 sccm to 50 sccm; chlorine in a range of between about 40 sccm to 80 sccm, a Tcp in a range of between about 200 watts to 500 watts at an RF bias in a range of between about 100 watts to 200 watts at a pressure in a range of between about 4 mtorr to 8 mtorr.
摘要（中）：

选择性地蚀刻由SiO 2，In 2 O 3 N 3和Ti构成的三层结构的方法包括蚀刻SiO 2 ，在钛层上停止，使用C 3 3 F 8 N在约10sccm至30sccm之间的范围内; 在约20sccm至40sccm的范围内的氩气，使用在约1000瓦特至3000瓦特之间的范围内的RF源和在约400瓦特至800瓦特范围内的RF偏压， 约2mtorr至6mtorr; 并且使用在约10sccm至50sccm之间的范围内的BCl蚀刻钛，停止在In 2 N 3 O 3层处; 在约40sccm至80sccm的范围内的氯，在约200瓦特至200瓦特之间的RF偏压下在约200瓦特至500瓦特之间的范围内的T cp < 在约4mtorr至8mtorr的范围内的压力。

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