In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes (1a;1b) of the device. A cell with a capacitor-like structure is defined in the active material (2) and can be accessed for an addressing operation via the electrodes. At least one top electrode (1b) comprises a layer of gold in contact with active material. A second layer (12) on the top electrode (1b) comprises conducting material different from gold or can alternatively also be made of gold. A via connection (13) extends between the second electrode layer (12) and a bottom electrode (1a) or another electrode (1b) in the bottom electrode layer. In case the second electrode layer (12) is made of gold the via metal of the via connection can also be gold and integral with the second electrode layer (12). In a method for establishing a top via electrode connection in the device (M), a first top electrode layer of gold is deposited and a via hole etched therethrough and down to the bottom electrode layer, and via metal is deposited to form a via connection (13) and then a second top electrode layer (12) is deposited above the first electrode layer of gold and contacting the via connection.