发明申请
- 专利标题： High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element
- 专利标题（中）： 高介电常数绝缘膜，薄膜电容元件，薄膜多层电容器以及薄膜电容元件的制造方法
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申请号： US10546834申请日： 2004-02-24
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公开(公告)号： US20060091494A1公开(公告)日： 2006-05-04
- 发明人: Yuki Miyamoto , Yukio Sakashita
- 申请人： Yuki Miyamoto , Yukio Sakashita
- 申请人地址： JP Tokyo 103-8272
- 专利权人： TDK CORPROATION
- 当前专利权人： TDK CORPROATION
- 当前专利权人地址： JP Tokyo 103-8272
- 优先权： JP2003-051838 20030227
- 国际申请： PCT/JP04/02118 WO 20040224
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/00
摘要：
A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2 Am−1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer 8a and a lower portion electrode 6, a second bismuth layer-structured compound layer 8b including bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer 8a.
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