发明申请
- 专利标题： Method for analyzing the structure of deep trench capacitors and a preparation method thereof
- 专利标题（中）： 深沟槽电容器结构分析方法及其制备方法
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申请号： US11031075申请日： 2005-01-10
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公开(公告)号： US20060094132A1公开(公告)日： 2006-05-04
- 发明人: Hsien-Wen Liu , Eugene Cheng , Jen-Lang Lue
- 申请人： Hsien-Wen Liu , Eugene Cheng , Jen-Lang Lue
- 优先权： TW93133091 20041029
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.