发明申请
US20060094259A1 Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication process
审中-公开
在半导体制造工艺中形成用于高介电常数栅极电介质的气体退火工艺
- 专利标题： Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication process
- 专利标题（中）： 在半导体制造工艺中形成用于高介电常数栅极电介质的气体退火工艺
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申请号： US10980445申请日： 2004-11-03
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公开(公告)号： US20060094259A1公开(公告)日： 2006-05-04
- 发明人: David Gilmer , Olubunmi Adetutu , Hsing Tseng
- 申请人： David Gilmer , Olubunmi Adetutu , Hsing Tseng
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/31 ; H01L21/469
摘要：
A semiconductor fabrication annealing process includes depositing a high dielectric constant gate dielectric over a substrate and annealing the gate dielectric. Annealing the gate dielectric includes exposing the gate dielectric to an inert ambient and ramping the inert ambient to an annealing temperature. A passivating gas is then introduced into the ambient while maintaining the ambient at the annealing temperature. This passivating ambient is then maintained at the annealing temperature for a specified duration. While maintaining the presence of the passivating gas in the ambient, the ambient temperature is then ramped down from the annealing temperature to a second temperature, which is preferably less than 100° C. The passivating gas is preferably hydrogen gas, deuterium gas, or a combination of the two. The annealing temperature is preferably greater than approximately 470° C.
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