- 专利标题: Electron beam apparatus and a device manufacturing method by using said electron beam apparatus
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申请号: US11304680申请日: 2005-12-16
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公开(公告)号: US20060097200A1公开(公告)日: 2006-05-11
- 发明人: Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
- 申请人: Mamoru Nakasuji , Takao Kato , Nobuharu Noji , Tohru Satake , Takeshi Murakami , Kenji Watanabe
- 专利权人: Ebara Corporation
- 当前专利权人: Ebara Corporation
- 优先权: JP2001-181955 20010615; JP2001-192597 20010626; JP2001-269880 20010906; JP2001-270935 20010906; JP2001-273078 20010910
- 主分类号: G21G4/00
- IPC分类号: G21G4/00
摘要:
An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
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