Semiconductor package and fabrication method

Invention Application

US20060099733A1 Semiconductor package and fabrication method 审中-公开

Title translation: 半导体封装及制造方法

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Patent Title: Semiconductor package and fabrication method
Patent Title (中): 半导体封装及制造方法
Application No.: US10985312

Application Date: 2004-11-09
Publication No.: US20060099733A1

Publication Date: 2006-05-11
Inventor: Frank Geefay , Richard Ruby
Applicant: Frank Geefay , Richard Ruby
Main IPC: H01L21/44
IPC: H01L21/44

Semiconductor package and fabrication method

Abstract:

The present invention provides a first wafer and a second wafer having a device. A separation layer is formed on the first wafer. A cap is formed on the separation layer. The cap and the second wafer are bonded using a gasket. The first wafer is separated from the cap to form the semiconductor package comprised of the cap, the gasket, and the second wafer.

Abstract(Chinese):

本发明提供了具有装置的第一晶片和第二晶片。在第一晶片上形成分离层。在分离层上形成盖。盖和第二晶片使用垫圈结合。第一晶片与盖分离以形成由盖，垫圈和第二晶片组成的半导体封装。

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Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的