发明申请
US20060099760A1 Storage capacitors for semiconductor devices and methods of forming the same
有权
用于半导体器件的存储电容器及其形成方法
- 专利标题: Storage capacitors for semiconductor devices and methods of forming the same
- 专利标题(中): 用于半导体器件的存储电容器及其形成方法
-
申请号: US11266520申请日: 2005-11-03
-
公开(公告)号: US20060099760A1公开(公告)日: 2006-05-11
- 发明人: Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
- 申请人: Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2004-0091718 20041111
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.