发明申请
- 专利标题: Tri-gated molecular field effect transistor and method of fabricating the same
- 专利标题(中): 三门分子场效应晶体管及其制造方法
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申请号: US11135285申请日: 2005-05-24
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公开(公告)号: US20060102889A1公开(公告)日: 2006-05-18
- 发明人: Chan Woo Park , Sung Yool Choi , Han Young Yu , Ung Hwan Pi
- 申请人: Chan Woo Park , Sung Yool Choi , Han Young Yu , Ung Hwan Pi
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 优先权: KR2004-94585 20041118
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
Provided is a tri-gated molecular field effect transistor (FET) and a method of fabricating the same. The tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.