发明申请
- 专利标题: Thin film transistor array panel and method for manufacturing the same
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US11228852申请日: 2005-09-16
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公开(公告)号: US20060102907A1公开(公告)日: 2006-05-18
- 发明人: Je-Hun Lee , Yang-Ho Bae , Beom-Seok Cho , Chang-Oh Jeong
- 申请人: Je-Hun Lee , Yang-Ho Bae , Beom-Seok Cho , Chang-Oh Jeong
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2004-0093887 20041117
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).
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