发明申请
US20060105489A1 Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
有权
为CMOS成像器件像素提供具有比其它成像器件晶体管具有更低阈值电压的晶体管的方法和装置
- 专利标题： Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
- 专利标题（中）： 为CMOS成像器件像素提供具有比其它成像器件晶体管具有更低阈值电压的晶体管的方法和装置
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申请号： US11318510申请日： 2005-12-28
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公开(公告)号： US20060105489A1公开(公告)日： 2006-05-18
- 发明人: Howard Rhodes
- 申请人： Howard Rhodes
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.
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