发明申请
US20060105574A1 Process for defining integrated circuits in semiconductor electronic devices 审中-公开
用于定义半导体电子器件中的集成电路的工艺

Process for defining integrated circuits in semiconductor electronic devices
摘要:
A process for the definition of integrated circuits on a wafer having at least one silicon semiconductor layer includes masking the wafer with a photoresist layer. The process includes a development step of the photoresist with definition of a lithographic pattern, a hardening step of the photoresist with a plasma of inert gas, and a dry etching step with a plasma of reactive gas for transferring the lithographic pattern on the wafer. The dry etching step includes at least an initial step, or breakthrough, with a plasma of a chlorinated gas and of an inert gas for removal of a silicon native oxide grown on the wafer.
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