发明申请
- 专利标题: Apparatus and method for producing single crystal, and silicon single crystal
- 专利标题(中): 单晶和硅单晶的制造方法
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申请号: US11131333申请日: 2005-05-18
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公开(公告)号: US20060107889A1公开(公告)日: 2006-05-25
- 发明人: Norihito Fukatsu , Kazuyuki Egashira , Senrin Fu
- 申请人: Norihito Fukatsu , Kazuyuki Egashira , Senrin Fu
- 申请人地址: JP Tokyo
- 专利权人: SUMCO CORPORATION
- 当前专利权人: SUMCO CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JPP2004-149251 20040519
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04
摘要:
The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.