发明申请
US20060109884A1 Distributed feedback semiconductor laser and method for manufacturing the same
审中-公开
分布式反馈半导体激光器及其制造方法
- 专利标题: Distributed feedback semiconductor laser and method for manufacturing the same
- 专利标题(中): 分布式反馈半导体激光器及其制造方法
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申请号: US11250209申请日: 2005-10-14
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公开(公告)号: US20060109884A1公开(公告)日: 2006-05-25
- 发明人: Young-Hyun Kim , Jung-Kee Lee , In Kim , Sung-Soo Park
- 申请人: Young-Hyun Kim , Jung-Kee Lee , In Kim , Sung-Soo Park
- 专利权人: Samsung Electronics Co., LTD
- 当前专利权人: Samsung Electronics Co., LTD
- 优先权: KR2004-97126 20041124
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S3/08
摘要:
A distributed feedback semiconductor laser oscillating in a single mode and a method for manufacturing the same is disclosed. The distributed feedback semiconductor laser includes an active layer; a clad layer formed adjacent to the active layer; and diffraction gratings periodically formed in the clad layer and separated from each other by a predetermined distance. The diffraction gratings are formed of a nonconductor so that a current injected into the active layer is partially blocked and distribution of gain coefficient is varied. The nonconductor is an oxidized semiconductor material.
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