Invention Application
- Patent Title: Field emission electrode, manufacturing method thereof, and electronic device
- Patent Title (中): 场发射电极，其制造方法和电子器件
-
Application No.: US11287838Application Date: 2005-11-28
-
Publication No.: US20060113891A1Publication Date: 2006-06-01
- Inventor: Kazuhito Nishimura , Hideki Sasaoka
- Applicant: Kazuhito Nishimura , Hideki Sasaoka
- Applicant Address: JP Kochi-shi JP Tokyo
- Assignee: Kochi Industrial Promotion Center,Casio Computer Co., Ltd.
- Current Assignee: Kochi Industrial Promotion Center,Casio Computer Co., Ltd.
- Current Assignee Address: JP Kochi-shi JP Tokyo
- Priority: JP2004-343203 20041126; JP2005-252928 20050831; JP2005-299468 20051013
- Main IPC: H01J63/04
- IPC: H01J63/04 ; H01J1/62
Abstract:
An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.
Public/Granted literature
- US07755271B2 Field emission electrode, manufacturing method thereof, and electronic device Public/Granted day:2010-07-13
Information query
