发明申请
- 专利标题: Exchange biased magnetic head having confined current path
- 专利标题(中): 具有限制电流路径的交换偏置磁头
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申请号: US10998637申请日: 2004-11-30
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公开(公告)号: US20060114619A1公开(公告)日: 2006-06-01
- 发明人: Rachid Sbiaa , Isamu Sato , Haruyuki Morita
- 申请人: Rachid Sbiaa , Isamu Sato , Haruyuki Morita
- 专利权人: TDK CORPORATION,KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: TDK CORPORATION,KABUSHIKI KAISHA TOSHIBA
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/33
摘要:
An in-stack bias is provided for stabilizing the free layer of a ballistic magneto resistive (BMR) sensor. In-stack bias includes a decoupling layer that is a spacer between the free layer and a ferromagnetic stabilizer layer of the in-stack bias, and an anti-ferromagnetic layer positioned above the ferromagnetic layer. The spacer is a nano-contact layer having magnetic particles positioned in a non-magnetic matrix. The free layer may be single layer, composed or synthetic, and the in-stack bias may be laterally bounded by the sidewalls, or alternatively, extend above the sidewalls and spacer. Additionally, a hard bias may also be provided. The spacer of the in-stack bias results in the reduction of the exchange coupling between the free layer and ferromagnetic stabilizing layer, an improved AΔR due to confinement of current flow through a smaller area, and increased MR due to the domain wall created within the magnetic nano-contact.