A chemical-mechanical planarization (CMP) slurry comprising at least one abrasive particles at least one oxidizer, and at least one carrier. The abrasive particles can be selected from: a particle with all soft material, a particle having a soft outer material and a hard inner material, an inner charged particle, a magnetized particle, and an empty core particle. The substrate to be polished can be Aluminum, Copper, Ti, TiN, Ag. W, or their alloys, Oxide, Ni—P, Si3N4 for example.