- 专利标题： Techniques for patterning features in semiconductor devices
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申请号： US11337411申请日： 2006-01-23
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公开(公告)号： US20060118785A1公开(公告)日： 2006-06-08
- 发明人: Scott Allen , Katherina Babich , Steven Holmes , Arpan Mahorowala , Dirk Pfeiffer , Richard Wise
- 申请人： Scott Allen , Katherina Babich , Steven Holmes , Arpan Mahorowala , Dirk Pfeiffer , Richard Wise
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
公开/授权文献
- US07545041B2 Techniques for patterning features in semiconductor devices 公开/授权日：2009-06-09
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