发明申请
- 专利标题： Semiconductor device and the method of producing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11330155申请日： 2006-01-12
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公开(公告)号： US20060118959A1公开(公告)日： 2006-06-08
- 发明人: Osamu Yamagata
- 申请人： Osamu Yamagata
- 优先权： JPP2003-415516 20031212
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A SiP type semiconductor device and a method of producing the same is provided wherein curvature of a wafer is suppressed in the production steps, workability does not decline, and high throughput can be attained. An insulation layer is formed by stacking a plurality of resin layers on a semiconductor substrate, wiring layers are formed by being buried in the insulation layer so as to be connected to an electronic circuit, an insulating buffer layer is formed on the insulation layer, a conductive post is formed through the buffer layer and connected to the wiring layer, and a projecting electrode is formed projecting from a surface of the buffer layer and connected to the conductive post.
公开/授权文献
- US07462511B2 Semiconductor device and the method of producing the same 公开/授权日：2008-12-09
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