- 专利标题: Method of collector formation in BiCMOS technology
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申请号: US11288843申请日: 2005-11-29
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公开(公告)号: US20060124964A1公开(公告)日: 2006-06-15
- 发明人: Peter Geiss , Peter Gray , Alvin Joseph , Qizhi Liu
- 申请人: Peter Geiss , Peter Gray , Alvin Joseph , Qizhi Liu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/109
- IPC分类号: H01L31/109
摘要:
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath the shallow trench isolation region on the subcollector of the device. Specifically, the HBT of the present invention includes a substrate including at least a subcollector; a buried refractory metal silicide layer located on the subcollector; and a shallow trench isolation region located on a surface of the buried refractory metal silicide layer. The present invention also provides a method of fabricating such a HBT. The method includes forming a buried refractory metal silicide underneath the shallow trench isolation region on the subcollector of the device.
公开/授权文献
- US07491985B2 Method of collector formation in BiCMOS technology 公开/授权日:2009-02-17