发明申请
US20060125121A1 Capacitor-less 1T-DRAM cell with Schottky source and drain
审中-公开
具有肖特基源和漏极的无电容1T-DRAM电池
- 专利标题： Capacitor-less 1T-DRAM cell with Schottky source and drain
- 专利标题（中）： 具有肖特基源和漏极的无电容1T-DRAM电池
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申请号： US11081416申请日： 2005-03-16
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公开(公告)号： US20060125121A1公开(公告)日： 2006-06-15
- 发明人: Chih-Hsin Ko , Hung-Wei Chen , Wen-Chin Lee , Min-Hwa Chi , Chung-Hu Ke
- 申请人： Chih-Hsin Ko , Hung-Wei Chen , Wen-Chin Lee , Min-Hwa Chi , Chung-Hu Ke
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
A tunneling injection based Schottky source/drain memory cell comprising: a first semiconductor layer with a first conductivity type overlying an insulating layer, wherein the first semiconductor acts as a body region; a gate dielectric overlying the semiconductor layer; a gate electrode overlying the gate dielectric; a pair of spacers on sides of the gate electrodes; and a first Schottky barrier junction formed on a source region and a second Schottky barrier junction formed on a drain region on opposing sides of the body region. The source and the regions have an overlapping portion with the gate electrode and length of overlapping portion is preferably greater than about 5 Å. Interfacial layers are formed between the first and the second Schottky barrier regions.
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