发明申请
US20060128074A1 Combined fully-depleted silicon-on-insulator (FD-SOI) and partially-depleted silicon-on-insulator (PD-SOI)devices
有权
组合的完全耗尽的绝缘体上硅（FD-SOI）和部分耗尽的绝缘体上硅（PD-SOI）器件
- 专利标题： Combined fully-depleted silicon-on-insulator (FD-SOI) and partially-depleted silicon-on-insulator (PD-SOI)devices
- 专利标题（中）： 组合的完全耗尽的绝缘体上硅（FD-SOI）和部分耗尽的绝缘体上硅（PD-SOI）器件
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申请号： US11010849申请日： 2004-12-13
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公开(公告)号： US20060128074A1公开(公告)日： 2006-06-15
- 发明人: Howard Tigelaar , Gabriel Barna , Olivier Faynot
- 申请人： Howard Tigelaar , Gabriel Barna , Olivier Faynot
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A method (100) of forming fully-depleted (90) and partially-depleted (92) silicon-on-insulator (SOI) devices on a single die in an integrated circuit device (2) is disclosed using SOI starting material (4, 6, 8) and a selective epitaxial growth process (110).
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