发明申请
US20060128086A1 DEVICE HAVING DUAL ETCH STOP LINER AND PROTECTIVE LAYER AND RELATED METHODS
有权
具有双层阻挡层和保护层的装置及相关方法
- 专利标题: DEVICE HAVING DUAL ETCH STOP LINER AND PROTECTIVE LAYER AND RELATED METHODS
- 专利标题(中): 具有双层阻挡层和保护层的装置及相关方法
-
申请号: US10905024申请日: 2004-12-10
-
公开(公告)号: US20060128086A1公开(公告)日: 2006-06-15
- 发明人: Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha
- 申请人: Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/31
摘要:
The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a protective layer to a device, applying a first silicon nitride liner to the device, removing a portion of the first silicon nitride liner, removing a portion of the protective layer, and applying a second silicon nitride liner to the device.