发明申请
US20060128111A1 Raised sti process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
有权
用于提高源/漏极的应变Si / SGOI结构的多栅极和侧壁保护的提升过程
- 专利标题： Raised sti process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
- 专利标题（中）： 用于提高源/漏极的应变Si / SGOI结构的多栅极和侧壁保护的提升过程
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申请号： US11351801申请日： 2006-02-10
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公开(公告)号： US20060128111A1公开(公告)日： 2006-06-15
- 发明人: Jochen Beintner , Gary Bronner , Ramachandra Divakaruni , Byeong Kim
- 申请人： Jochen Beintner , Gary Bronner , Ramachandra Divakaruni , Byeong Kim
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
The present invention provides a strained/SGOI structure that includes an active device region of a relaxed SiGe layer, a strained Si layer located atop the relaxed SiGe layer, a raised source/drain region located atop a portion of the strained Si layer, and a stack comprising at least a gate dielectric and a gate polySi located on another portion of the strained Si layer; and a raised trench oxide region surrounding the active device region. The present invention also provides a method of forming such a structure. In the inventive method, the gate dielectric is formed prior to trench isolation formation thereby avoiding many of the problems associated with prior art processes in which the trench oxide is formed prior to gate dielectric formation.