发明申请
- 专利标题： Nonvolatile semiconductor memory device to which information can be written only once
- 专利标题（中）： 只能写入一次信息的非易失性半导体存储器件
-
申请号： US11231983申请日： 2005-09-22
-
公开(公告)号： US20060133127A1公开(公告)日： 2006-06-22
- 发明人: Hiroaki Nakano , Toshimasa Namekawa , Atsushi Nakayama , Osamu Wada , Hiroshi Ito
- 申请人： Hiroaki Nakano , Toshimasa Namekawa , Atsushi Nakayama , Osamu Wada , Hiroshi Ito
- 优先权： JP2004-366447 20041217
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C17/14 ; G11C17/18
摘要：
A nonvolatile semiconductor memory device having a storage element which is programmed with information by breaking an insulating film of the storage element, includes a cell array including a plurality of storage cells arranged in matrix, each of the storage cells having the storage element and a selection switch connected in series to the storage element, and a row selection control circuit which activates a row selection line connected to a given number of storage cells. The device further includes a write control circuit which controls a voltage of each of data lines bit by bit in accordance with write data, the data lines being connected to a given number of storage cells connected to the row selection line activated by the row selection control circuit.
公开/授权文献
信息查询
