发明申请
US20060133172A1 Apparatus and method for writing to and/or reading from a memory cell in a semiconductor memory 审中-公开
用于向半导体存储器中的存储单元进行写入和/或读取的装置和方法

  • 专利标题: Apparatus and method for writing to and/or reading from a memory cell in a semiconductor memory
  • 专利标题(中): 用于向半导体存储器中的存储单元进行写入和/或读取的装置和方法
  • 申请号: US11283493
    申请日: 2005-11-18
  • 公开(公告)号: US20060133172A1
    公开(公告)日: 2006-06-22
  • 发明人: Florian SchnabelJens Polney
  • 申请人: Florian SchnabelJens Polney
  • 优先权: DE102004055674.1 20041118
  • 主分类号: G11C7/04
  • IPC分类号: G11C7/04
Apparatus and method for writing to and/or reading from a memory cell in a semiconductor memory
摘要:
The invention proposes an apparatus for writing to and/or reading from a memory cell in a semiconductor memory having a selection transistor and a storage capacitor, where the apparatus has a device which is used to influence a threshold voltage for the selection transistor contrary to the influence of an ambient temperature. The invention also proposes a method for writing to and/or reading from a memory cell in a semiconductor memory having a selection transistor and a storage capacitor, where the method comprises the following method steps: a) an ambient temperature for the memory cell is ascertained, and b) an electrical voltage is applied to a substrate well in the selection transistor as a function of the ascertained ambient temperature such that a threshold voltage for the selection transistor is influenced contrary to the influence of an ambient temperature.
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