Invention Application
- Patent Title: Methods for forming a P-type polysilicon layer in a semiconductor device
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Application No.: US11291948Application Date: 2005-12-01
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Publication No.: US20060141752A1Publication Date: 2006-06-29
- Inventor: Jae-Suk Lee
- Applicant: Jae-Suk Lee
- Priority: KR10-2004-0111043 20041223
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A P-type polysilicon layer having a stable and desired resistivity is formed by alternately depositing a plurality of silicon atom layers and a plurality of group IIIA element atom layers on a semiconductor substrate by atomic layer deposition, and thereafter forming a P-type polysilicon layer by thermally diffusing the plurality of group IIIA element atom layers into the plurality of silicon atom layers. The plurality of group IIIA element atom layers may comprise Al, Ga, In, and/or Tl.
Public/Granted literature
- US07485555B2 Methods for forming a P-type polysilicon layer in a semiconductor device Public/Granted day:2009-02-03
Information query
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