发明申请
- 专利标题： Method to eliminate plating copper defect
- 专利标题（中）： 消除电镀铜缺陷的方法
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申请号： US11024917申请日： 2004-12-28
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公开(公告)号： US20060141768A1公开(公告)日： 2006-06-29
- 发明人: Jung-Chin Tsao , Chi-Wen Liu , Hsien-Ping Feng , Hsi-Kuei Cheng , Steven Lin , Min-Yuan Cheng
- 申请人： Jung-Chin Tsao , Chi-Wen Liu , Hsien-Ping Feng , Hsi-Kuei Cheng , Steven Lin , Min-Yuan Cheng
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.
公开/授权文献
- US07256120B2 Method to eliminate plating copper defect 公开/授权日：2007-08-14
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