- 专利标题： Chemical mechanical polishing method
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申请号： US11321848申请日： 2005-12-28
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公开(公告)号： US20060141790A1公开(公告)日： 2006-06-29
- 发明人: Dong-Keun Kim , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
- 申请人： Dong-Keun Kim , Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
- 优先权： KR2004-113752 20041228
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed.
公开/授权文献
- US07713879B2 Chemical mechanical polishing method 公开/授权日：2010-05-11