发明申请
- 专利标题: Device with stepped source/drain region profile
- 专利标题(中): 具有阶梯式源极/漏极区域剖面的器件
-
申请号: US11031843申请日: 2005-01-06
-
公开(公告)号: US20060145273A1公开(公告)日: 2006-07-06
- 发明人: Giuseppe Curello , Bernhard Sell , Sunit Tyagi , Chris Auth
- 申请人: Giuseppe Curello , Bernhard Sell , Sunit Tyagi , Chris Auth
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
Embodiments of the invention provide a transistor with stepped source and drain regions. The stepped regions may provide significant strain in a channel region while minimizing current leakage. The stepped regions may be formed by forming two recesses in a substrate to result in a stepped recess, and forming the source/drain regions in the recesses.
公开/授权文献
- US07335959B2 Device with stepped source/drain region profile 公开/授权日:2008-02-26