- 专利标题： Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
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申请号： US11294411申请日： 2005-12-06
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公开(公告)号： US20060145290A1公开(公告)日： 2006-07-06
- 发明人: Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiko Osawa , Wataru Saito , Masakazu Yamaguchi , Ichiro Omura
- 申请人： Hideki Okumura , Hitoshi Kobayashi , Masanobu Tsuchitani , Akihiko Osawa , Wataru Saito , Masakazu Yamaguchi , Ichiro Omura
- 优先权： JP2001-395558 20011227
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/425 ; H01L21/336
摘要：
A semiconductor device includes a diffusion area formed in a semiconductor layer of a first conductive type. The diffusion area comprises first and second impurity diffusion areas of the first and second conductive types, respectively. The diffusion area has a first and second areas which are defined by an impurity concentration of the first and second impurity diffusion areas. A junction between the first and second area is formed in a portion in which the first and second impurity diffusion areas overlap each other. A period of the impurity concentration, in a planar direction of the semiconductor layer, of the first or second area is smaller than the maximum width, in the planar direction of the semiconductor layer, of the first and second impurity diffusion areas constituting the first or second area.
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