A semiconductor device and a method for fabricating the same are provided. The method includes: forming a contact plug passing through an inter-layer insulation layer; sequentially forming a lower electrode layer, a dielectric layer and an upper electrode layer on the inter-layer insulation layer; patterning the upper electrode layer; patterning the dielectric layer and the lower electrode layer, thereby obtaining a capacitor including an upper electrode, a patterned dielectric layer and a lower electrode; and sequentially forming a first metal interconnection line connected with the contact plug and second metal interconnection lines connected with the capacitor.