发明申请
- 专利标题： Power semiconductor component and method for the production thereof
- 专利标题（中）： 功率半导体元件及其制造方法
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申请号： US11287736申请日： 2005-11-28
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公开(公告)号： US20060145342A1公开(公告)日： 2006-07-06
- 发明人: Josef Maynollo , Thomas Detzel
- 申请人： Josef Maynollo , Thomas Detzel
- 优先权： DE102004057485.5 20041129
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44
摘要：
A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as a result, a protection and sealing material region to be provided is formed, whilst avoiding electrically insulating additional protection and sealing layers that are usually to be provided.
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