- 专利标题: Self-aligned process for nanotube/nanowire FETs
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申请号: US11031168申请日: 2005-01-07
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公开(公告)号: US20060151844A1公开(公告)日: 2006-07-13
- 发明人: Phaedon Avouris , Roy Carruthers , Jia Chen , Christophe Detavernier , Christian Lavoie , Hon-Sum Wong
- 申请人: Phaedon Avouris , Roy Carruthers , Jia Chen , Christophe Detavernier , Christian Lavoie , Hon-Sum Wong
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L29/76 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
公开/授权文献
- US07598516B2 Self-aligned process for nanotube/nanowire FETs 公开/授权日:2009-10-06