发明申请
US20060152973A1 Multi-sensing level MRAM structure with different magneto-resistance ratios
审中-公开
具有不同磁阻比的多感测电平MRAM结构
- 专利标题： Multi-sensing level MRAM structure with different magneto-resistance ratios
- 专利标题（中）： 具有不同磁阻比的多感测电平MRAM结构
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申请号： US11374590申请日： 2006-03-13
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公开(公告)号： US20060152973A1公开(公告)日： 2006-07-13
- 发明人: Wen Lin , Denny Tang
- 申请人： Wen Lin , Denny Tang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G11C11/15
- IPC分类号： G11C11/15
摘要：
A new process and structure for a multi-sensing level magnetic random access memory (MRAM) cell having different magneto-resistance (MR) ratios includes an improved magnetic tunnel junction (MTJ) configuration. The MTJ configuration includes a first free layer proximate to a first tunneling barrier and a second free layer proximate to a second tunneling barrier and a pinned layer. The first free layer is sandwiched between the first and second tunneling layers. The first tunneling barrier has a MR ratio that differs from a MR ratio of the second tunneling barrier.