发明申请
US20060154434A1 Method of making an internal capacitive substrate for use in a circuitized substrate and method of making said circuitized substrate
有权
制造用于电路化衬底的内部电容性衬底的方法和制造所述电路化衬底的方法
- 专利标题： Method of making an internal capacitive substrate for use in a circuitized substrate and method of making said circuitized substrate
- 专利标题（中）： 制造用于电路化衬底的内部电容性衬底的方法和制造所述电路化衬底的方法
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申请号： US11172794申请日： 2005-07-05
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公开(公告)号： US20060154434A1公开(公告)日： 2006-07-13
- 发明人: Rabindra Das , John Lauffer , Voya Markovich , James Matthews
- 申请人： Rabindra Das , John Lauffer , Voya Markovich , James Matthews
- 申请人地址： US NY Endicott
- 专利权人： Endicott Interconnect Technologies, Inc.
- 当前专利权人： Endicott Interconnect Technologies, Inc.
- 当前专利权人地址： US NY Endicott
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/44
摘要：
A method of forming a capacitive substrate in which first and second conductors are formed opposite a dielectric, with one of these electrically coupled to a thru-hole connection. Each functions as an electrode for the resulting capacitor. The substrate is then adapted for being incorporated within a larger structure to form a circuitized substrate such as a printed circuit board or a chip carrier. Additional capacitors are also possible.
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