发明申请
- 专利标题: Semiconductor probe with resistive tip and method of fabricating the same
- 专利标题(中): 具有电阻尖端的半导体探针及其制造方法
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申请号: US11322340申请日: 2006-01-03
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公开(公告)号: US20060157440A1公开(公告)日: 2006-07-20
- 发明人: Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
- 申请人: Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR10-2005-0003977 20050115
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; B44C1/22 ; G01N23/00
摘要:
A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.
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