发明申请
- 专利标题： Semiconductor device with a cavity therein and a method of manufacturing the same
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申请号： US11315796申请日： 2005-12-22
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公开(公告)号： US20060157789A1公开(公告)日： 2006-07-20
- 发明人: Kazumi Inoh , Hidemi Ishiuchi , Satoshi Matsuda , Ichiro Mizushima , Tsutomu Sato
- 申请人： Kazumi Inoh , Hidemi Ishiuchi , Satoshi Matsuda , Ichiro Mizushima , Tsutomu Sato
- 优先权： JP2002-273409 20020919
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.
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