发明申请
- 专利标题: Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
- 专利标题(中): 在制造半导体器件期间使用的优化的光学光刻照明源
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申请号: US11038673申请日: 2005-01-19
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公开(公告)号: US20060158633A1公开(公告)日: 2006-07-20
- 发明人: Jeffrey Mackey , William Stanton
- 申请人: Jeffrey Mackey , William Stanton
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: G03B27/54
- IPC分类号: G03B27/54
摘要:
A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.
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