发明申请
US20060159946A1 Member having plasma-resistance for semiconductor manufacturing apparatus and method for producing the same
审中-公开
用于半导体制造装置的等离子体阻抗的构件及其制造方法
- 专利标题： Member having plasma-resistance for semiconductor manufacturing apparatus and method for producing the same
- 专利标题（中）： 用于半导体制造装置的等离子体阻抗的构件及其制造方法
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申请号： US11285771申请日： 2005-11-21
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公开(公告)号： US20060159946A1公开(公告)日： 2006-07-20
- 发明人: Junichi Iwasawa , Hironori Hatono , Naoya Terada , Yuji Aso , Masakatsu Kiyohara
- 申请人： Junichi Iwasawa , Hironori Hatono , Naoya Terada , Yuji Aso , Masakatsu Kiyohara
- 申请人地址： JP Fukuoka
- 专利权人： TOTO LTD.
- 当前专利权人： TOTO LTD.
- 当前专利权人地址： JP Fukuoka
- 优先权： JP2004-025261 20040202
- 主分类号： B05D1/12
- IPC分类号： B05D1/12 ; H01L29/12 ; B32B15/00
摘要：
In order to control and reduce generation of disjoined grains from a plasma-resistant member, the present invention provides a plasma-resistant member having no pores and boundary layers. In a layer structure made of yttria polycrystal and formed on a surface of a member for a semiconductor manufacturing apparatus on a side exposed to plasma, substantially no hyaline boundary layer exists in the yttria polycrystal. With this, corrosion from a boundary layer never progresses even in a plasma atmosphere. It is also possible to control and reduce disjoined grains due to such corrosion.
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