发明申请
- 专利标题： SHALLOW TRENCH ISOLATION FORMATION
- 专利标题（中）： 浅层分离形成
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申请号： US10905681申请日： 2005-01-17
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公开(公告)号： US20060160363A1公开(公告)日： 2006-07-20
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
公开/授权文献
- US07087531B1 Shallow trench isolation formation 公开/授权日：2006-08-08