发明申请
- 专利标题: Interconnections having double capping layer and method for forming the same
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申请号: US11367790申请日: 2006-03-03
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公开(公告)号: US20060163736A1公开(公告)日: 2006-07-27
- 发明人: Kyoung-woo Lee , Soo-geun Lee , Ki-chul Park , Won-sang Song
- 申请人: Kyoung-woo Lee , Soo-geun Lee , Ki-chul Park , Won-sang Song
- 专利权人: Samsung Electronics, Co., Ltd.
- 当前专利权人: Samsung Electronics, Co., Ltd.
- 优先权: KR02-87245 20021230
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L23/48 ; H01L29/40
摘要:
Provided are an interconnection of a semiconductor device which includes a capping layer and a method for forming the interconnection. The interconnection of the semiconductor device is a copper damascene interconnection where the capping layer is formed as a dual layer of a silicon nitride layer and silicon carbide layer on a copper layer processed by chemical mechanical polishing (CMP). Therefore, it is possible to maintain a high etching selectivity and a low dielectric constant of the silicon carbide layer while providing superior leakage suppression.