发明申请
- 专利标题： Method of producing semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US10532249申请日： 2003-11-05
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公开(公告)号： US20060166378A1公开(公告)日： 2006-07-27
- 发明人: Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
- 申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
- 优先权： JPNO.2002-328382 20021112
- 国际申请： PCT/JP03/14123 WO 20031105
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/00
摘要：
A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
公开/授权文献
- US07674634B2 Method of producing semiconductor device 公开/授权日：2010-03-09